Abstract
Tritium (T) uptake by exposure to gaseous T on deuterated C deposition layer on W was investigated. The C deposition layer were prepared by mixed D and C ion irradiation. The specimens were exposed to D and T mixed gas at 423 and 573K. The additional T retention by gas exposure at 573K was about 4 times higher than that by gas exposure at 423K. Further heating from 573 to 673K in vacuum after the gas exposure, resulted in more than 70% of retained T stayed after heating at 673K. That should be due to changing of nature of trap sites in C deposition layer during experiments. These results suggest that additional T trapped in such trap sites require higher temperature to remove retained T in such trap sites.
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