Abstract
In this paper we will review the results obtained when using gaseous dopant sources in the MOMBE of GaAs and InP. The main focus will be on the decomposition behavior of the dopant sources and the dopant incorporation process. Due to the fact that the molecules have to be decomposed on the growing surface the overall process of dopant incorporation is more complex than that for elemental dopants. Based on the presented findings the suitability of a number of dopant sources will be evaluated. The properties of the dopant atoms themselves (diffusion, surface segregation, maximum obtainable doping level) are summarized.
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