Abstract
Single- (SiO2) and double-layer (SiO2/Si3N4) antireflection coatings for wavelength region around 800 nm were deposited by magnetron sputtering onto GaSe crystals. The fabricated AR-coated crystals were used for terahertz generation by optical rectification of femtosecond laser pulses. The increase of generated terahertz power by about 28% for the GaSe crystals with the single-layer antireflection coatings was found as consequence of 27 percent increase in transmission through the front face of the crystal.
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