Abstract
In this paper, phase change characteristics of (GaSb)0.5–Ge1.6Te alloy were investigated for long data retention phase change memory application. (GaSb)0.5–Ge1.6Te film has high crystallization temperature (357 °C) and large crystallization activation energy (4.57 eV), resulting in a good data retention ability (251 °C for 10 years). The prominent advantages can be seen in comparison with those of pure GeTe and Ge2Sb2Te5. The fine crystal grain size is smaller than GeTe owing to GaSb doping, which is contributed to operation speed. Furthermore, as short as 20 ns electrical pulse can achieve Reset operation. The pulse width of 200 ns requires only a Reset voltage of 1.5 V, which is much lower than that of GeTe-based cells.
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