Abstract
Metal-semiconductor-metal (MSM) photodetectors made of gallium antimonide (GaSb) on silicon waveguides by the rapid melt growth method are investigated. By controlling the thermodynamics of crystal regrowth and optimizing the process condition, single-crystal GaSb stripes are monolithically integrated on the silicon substrate. The MSM GaSb waveguide photodetector shows a responsivity of 0.57 A/W at 1550 nm.
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