Abstract
We demonstrate the formation of GaSb quantum dots (QDs) on a GaAs(001) substrate bydroplet epitaxy using molecular beam epitaxy. The high crystal quality and bimodal sizedistribution of the QDs are confirmed using atomic force and transmission electronmicroscope images. A staggered type-II QD band structure is suggested by aphotoluminescence peak that is blue shifted with increasing excitation intensity, alarge emission polarization of 60%, and a long carrier decay time of 11.5 ns. Ourresearch provides a different approach to fabricating high quality GaSb type-II QDs.
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