Abstract
GaSb/GaAs quantum dot systems are fabricated using MBE under various growth modes.The as-grown samples are studied with in situ synchrotron radiation XPS covering the As3d, Sb 4d and Ga 3d core levels and the valence band region. The XPS spectra showdramatic changes with the growth modes, reflecting changes in the local electronicstructure and chemical environments of the surface and interface atoms in both quantumdots and wetting layer. A quantum dot specific contribution near the valence bandmaximum is identified and related to the hole accumulation process. Local valence bandoffsets measured in the GaSb/GaAs systems evolve over the interface region and depend onthe growth modes, which adds another degree of freedom to band engineering on thenanoscale.
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