GaSb-Based Semiconductor Disk Laser With 130-nm Tuning Range at 2.5 $\mu$m

Abstract

We demonstrate a GaSb-based semiconductor disk laser emitting 0.6 W of output power at 2.5 μm in a fundamental mode regime (M2 <; 1.6). A gain structure grown by molecular beam epitaxy and assembled with an intracavity diamond heat spreader demonstrates a promising potential for power scaling and broad wavelength tuning. A tuning range of 130 nm with output power up to 310 mW has been achieved which represents the largest spectral coverage reported to date for disk lasers at this wavelength.