Abstract
A design for GaSb-based type-I quantum well diode lasers with an AlGaInAsSb/GaInAsSb active region, GaSb and AlGaAsSb separate confinement layers, and an AlSb/InAs hole stopper is proposed. The suppression of carrier recombination outside of the active region leads to improved laser efficiency and temperature stability. At a heatsink temperature of 17°C, the 2-mm-long, 100-μm-wide, anti-/high-reflection coated devices demonstrate threshold current densities of ~ 350 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and emit ~ 220 mW of continuous wave output power at 3.15 μm.
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