Abstract
Gas-source molecular beam epitaxy growth of Ga x In 1-x As y P 1-y , layers lattice-matched to GaAs in reported. X-ray diffraction, photoluminescence, and Hall measurements show that the layers are of good quality. High-performance Al-free (In)GaAs(P)/Ga x In 1-x As t P 1-y , quantum well lasers, emitting at 0.8≤λ≤ 1.1 μm, and GaAs/Ga x In 1-x As y P 1-y , heterojunction diodes are also demonstrated. The results are comparable to those obtained for the best AlGaAs based materials and devices. In particular, we report on the first tensile-strained GaAsP/GaInAsP/GaInP quantum well laser
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