Gas source molecular beam epitaxial growth and device applications in In 0.5Ga 0.5P and In 0.5Al 0.5P heterostructures

Abstract

This article reviews briefly the recent progress in the In 0.5Ga 0.5P and In 0.5Al 0.5P epilayers lattice-matched to GaAs grown by gas source molecular beam rpitaxy (GSMBE). It covers the growth conditions, and the structural, electrical, and optical properties. Important research results on the electronic and photonic device applications of these materials grown by GSMBE are also reviewed and discussed. We focus on the InGaP/InGaAs and InAlP/InGaAs pseudomorphic modulation-doped field-effect transistors, InGaP/GaAs and InAlP/GaAs heterojunction bipolar transistors, short wavelength visible laser diodes, and 0.98 μm lasers using In 0.5Ga 0.5P as the cladding layers. The results clearly demonstrate that high quality In 0.5Ga 0.5P and In 0.5Al 0.5P heterostructures prepared by GSMBE are suitable for state-of-the-art device applications.