Abstract
Summary form only given. Wavelength division multiplexing (WDM) technology is very important for optical fiber communication systems to increase transport capacity. However, one of the problems encountered when using InGaAsP/InP laser diodes (LDs) is that the lasing wavelength fluctuates with ambient temperature variation mainly due to the temperature dependence of the bandgap energy. To overcome this problem, we proposed TlInGaAs(P) as new III-V semiconductors showing temperature-independent bandgap energy for the possible application to the temperature-stable lasing wavelength LDs. We have already succeeded in the growth of TlInGaAs/InP double-hetero (DH) structures and obtained the very small temperature variation of the photoluminescence (PL) and electroluminescence (EL) peak energies. In this paper, we will report the gas source MBE growth of TlInGaAs/InP LD wafers and their first successful laser operation.
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