Abstract
Tl-containing III–V semiconductors are expected to produce temperature-insensitive wavelength laser diodes, which are important in wavelength division multiplexing optical fiber communication systems. TlInGaAs/InP double heterostructure lasers were grown by gas source MBE. Temperature variation of electroluminescence emission peak wavelength as small as 0.064 nm/K (0.047 meV/K) was observed. Current injection pulsed laser operation was obtained up to 310 K. The threshold current density was about 5 kA/cm 2 at 1.66 μm at room temperature. T 0 value was about 90 K. CW operation was also obtained at 77 K.
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