Abstract
TlInGaAs/InP double heterostructures (DHs) were grown on (1 0 0) InP substrates by gas source MBE. The photoluminescence (PL) peak energy and its variation with temperature decreased with increasing Tl composition. For the DH with a Tl composition of 13%, the PL peak energy varied only slightly with temperature (−0.03 meV/K). This value corresponds to a wavelength variation of 0.04 nm/K and is much smaller than that of the lasing wavelength of InGaAsP/InP distributed feedback laser diodes (0.1 nm/K). The TlInGaAs/InP light emitting diodes were also fabricated and the similar small temperature variation for the electroluminescence peak energy was observed. The results are a great first step to realize the laser diodes with temperature insensitive lasing wavelength characteristics, which are important in the wavelength division multiplexing (WDM) optical fiber communication systems.
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