Abstract
This paper reports the results of a study in which disilane was shown to be an effective alternative gaseous dopant source in gas-source MBE growth of high-quality n-type InP using triethylindium and phosphine. The Si atomic concentration and the carrier concentration showed a linear dependence on the disilane flow rate over the range of carrier concentration investigated (7.8 × 10 16-1.4 × 10 18 cm -3). The electron mobilities and low-temperature photoluminescence properties indicate that silicon is mainly incorporated as a shallow donor impurity and the epilayers are low compensated.
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