Abstract
We have studied the effects of N incorporation in Ga(In)P and explored their applications for light-emitting diodes (LEDs). The GaInNP epilayers were grown on (1 0 0) GaP substrates by gas-source MBE using an RF nitrogen radical beam source. Red LEDs based on GaN 0.011P 0.989/GaP double-heterostructure grown on (1 0 0) GaP substrates were successfully fabricated. Compared to conventional AlGaInP LEDs, this LED eliminates etching of the GaAs substrate and wafer-bonding of a transparent GaP substrate. Partially relaxed GaN 0.011P 0.989 active layers, however, degraded the emission efficiency. Incorporation of In in GaN 0.015P 0.985 alloy to lattice-match to GaP not only maintains the direct band gap, but also improves the sample structural quality and increases the integrated PL intensity by 40%, compared to GaN 0.015P 0.985.
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