Abstract
This review focuses on polymer field-effect transistor (PFET) based gas sensor with polymer as the sensing layer, which interacts with gas analyte and thus induces the change of source-drain current (ΔISD). Dependent on the sensing layer which can be semiconducting polymer, dielectric layer or conducting polymer gate, the PFET sensors can be subdivided into three types. For each type of sensor, we present the molecular structure of sensing polymer, the gas analyte and the sensing performance. Most importantly, we summarize various analyte–polymer interactions, which help to understand the sensing mechanism in the PFET sensors and can provide possible approaches for the sensor fabrication in the future.
Highlights
Organic field-effect transistor (OFET) based gas sensors have attracted great interest due to the high selectivity, repeatable response and low-cost production [1,2,3,4,5,6]
The device configuration of OFETs and the instrument for the response measurement are relatively simple. These advantages endow the OFET sensors with great potential application in electronic nose, which can reproduce the human sensing with sensor arrays and pattern recognition systems
Analyte exposure upon an OFET changes the source-drain current flowing in the first few monolayers above the dielectric/semiconducting polymer interface
Summary
Organic field-effect transistor (OFET) based gas sensors have attracted great interest due to the high selectivity, repeatable response and low-cost production [1,2,3,4,5,6]. Into carboxyl (–COOH)with group in the sidebased chainon of traditional transistor (horizontal channel), detection with this device structure obtained a much pDPPCOOH-BT by thermal treatment endows the OFET sensor with good selectivity toward higher sensitivity with The low transformation detection limit process of 30 ppb and a low operating voltage around. Analytes diffuse into the film until they reach the conducting channel at the semiconducting polymer/dielectric interface. It is the concentration of analyte at this interface, CA (x = T), that gives rise to the electrical response of the sensor.
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