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Abstract
Two different electrical measurement methods have been used to study p-Si/SiO 2/SnO 2/Pd structures which could be used in gas sensors. One of the methods is the contact potential difference measurement which characterizes the surface of the structure. A new method using a modulated light beam permits the measurement of the photopotential. These two methods are described. The relation between the surface potential and the photopotential is examined.
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