Abstract
In situ patterned zinc oxide (ZnO) thin films were prepared by precipitation of Zn(NO 3) 2/urea aqueous solution and by microcontact printing of self-assembled monolayers (SAMs) on Al/SiO 2/Si substrates. The visible precipitation of Zn(OH) 2 from the urea containing Zn(NO 3) 2 solution was enhanced by increasing the reaction temperature and the amount of urea. The optimized condition for the ZnO thin films was found to be the Zn(NO 3) 2/urea ratio of 1/8, the precipitation temperature of 80 °C, the precipitation time of 1 h and the annealing temperature of 600 °C, respectively. SAMs are formed by exposing Al/SiO 2/Si to solutions comprising of hydrophobic octadecylphosphonic acid (OPA) in tetrahydrofuran and hydrophilic 2-carboxylethylphosphonic acid (CPA) in ethanol. The ZnO thin film was then patterned with the heat treatment of Zn(OH) 2 precipitated on the surface of hydrophilic CPA. The ZnO gas sensor was exposed to different concentrations of C 3H 8 (5000 ppm), CO (250 ppm) and NO (1000 ppm) at elevated temperatures to evaluate the gas sensitivity of ZnO sensors. The optimum operating temperatures of C 3H 8, CO and NO gases showing the highest gas sensitivity were determined to be 350, 400 and 200 °C, respectively.
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