Abstract
A thin-film field-effect transistor (TFT) with an organic semiconductor as the channel material was demonstrated. Cast-coated regioregular poly-3-hexylthiophene (P3HT) thin film shows conducting characteristics with holes as carriers. The output characteristics of TFTs showed a field-effect mobility of 21.4 cm 2/Vs and an on/off ratio of 100 in the accumulation mode. No ideal device characteristics were obtained in the depletion mode. A change in drain current ( I d) was observed when device was exposed to small amounts of nitrous oxide (N 2O) gas. The total variation in the I d was 27 μA. Using the TFTs, it was possible to detect 1000 ppm of N 2O gas at room temperature. N 2O gas was found to affect the charge transport properties of the P3HT film.
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