Gas-sensing properties of In-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=--Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- alloy films

Almaev A V Almaev A V,Butenko P N Butenko P N,Chernikov E V Chernikov E V,Chikiryaka A V Chikiryaka A V,Kushnarev B O Kushnarev B O,Nikolaev V I Nikolaev V I,Pechnikov A I Pechnikov A I,Scheglov M P Scheglov M P,Stepanov S I Stepanov S I,Timashov R B Timashov R B

doi:10.21883/tpl.2022.07.54046.19211

Gas-sensing properties of In-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=--Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- alloy films

Almaev A V Almaev A V, Butenko P N Butenko P N + Show 8 more

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https://doi.org/10.21883/tpl.2022.07.54046.19211

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Journal: Technical Physics Letters	Publication Date: Jan 1, 2022
Citations: 1

Affiliation: Ioffe Institute, National Research Tomsk State University

#Halide Vapor Phase Epitaxy #Low Base Resistance + Show 8 more

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Abstract

The effect of the gaseous medium composition on the electrically conductive properties of In2O3-Ga2O3 films obtained by halide vapor phase epitaxy has been studied. In the temperature range of 100-550oC, the In2O3-Ga2O3 films exhibit high sensitivity to H2, NH3 and possess hyphen performance and low base resistance. A qualitative mechanism for the sensitivity of In2O3-Ga2O3 films to gases is proposed. Keywords: In2O3-Ga2O3, halide vapor-phase epitaxy, gas sensitivity.

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