Abstract

Nanostructured Indium(III) oxide (In2O3) films deposited by low temperature pulsed electron deposition (LPED) technique on customized alumina printed circuit boards have been manufactured and characterized as gas sensing devices. Their electrical properties have monitored directly during deposition to optimize their sensing performance. Experimental results with oxidizing (NO2) as well as reducing (CO) gases in both air and inert gas carriers are discussed and modeled.

Highlights

  • In recent years, Indium(III) oxide (In2 O3 ) has shown a potential as a promising new material for gas sensing applications, in particular suitable for the detection of low concentrations of oxidizing gases like O3, NOx, and Cl2 [1,2,3,4]

  • It was shown that In2 O3 -based gas sensors may have sufficient sensitivity and good selectivity toward some reducing gases [5,6], this latter property strongly depending on the preparation route and surface stoichiometry

  • It is known that sensing performance of a metal oxides sensor is mainly regulated by its microscopic morphology and defect chemistry, material properties largely depending on the manufacturing process

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Summary

Introduction

Indium(III) oxide (In2 O3 ) has shown a potential as a promising new material for gas sensing applications, in particular suitable for the detection of low concentrations of oxidizing gases like O3 , NOx , and Cl2 [1,2,3,4]. It is known that sensing performance of a metal oxides sensor is mainly regulated by its microscopic morphology and defect chemistry, material properties largely depending on the manufacturing process In this regard, performance of gas sensors has been shown to be really boosted by using nano-structured materials [1,2,3,6]. In2 O3 nano-structured films have been manufactured by many different techniques such as chemical vapor deposition, thermal oxidation of In films, spray pyrolysis, sol–gel, atomic layer deposition, pulsed laser ablation, DC, and RF-sputtering [7]. These techniques generally require a complex processing for precursors to be formed in the environment of the deposition chamber. Reducing the film thickness and the grain size decreases the time constants of the gas response of In2 O3 -based gas sensors, and increases the response to oxidizing gases (thanks to an increased gas permeability of the film)

Thin Film Deposition and Characterization
Photograph
Advance
Optical transmission transmission of of aa In
A Roughness roughness of
Sensor Preparation and Characterization
Figure
Experimental Results
10. Gas properties of of a In time
Sensor Model for Oxidizing Gas
15 PEER and REVIEW
Conclusions
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