Abstract
Trace of protic gases can alter the conductivity of the polycrystalline silicon nanowire (poly-Si NW) field effect transistor (FET). The aprotic gases have no effect on the electrical parameters. The proposed mechanism is due to the surface grain boundary of poly-Si NW. The direct evidence is obtained from the comparison between single- and poly-Si NW. The electrical parameters are varied according to the relative humidity levels. Nevertheless, the water molecules can be removed by vacuum indicating that it is physical absorption on the surface. As a result, the poly-Si NW FET has potential to be a reusable device for protic gas sensor.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
