Abstract
The effects of gas residence time on the plasma parameters such as the ion current density (ICD) and hot-electron population have been studied in an inductively coupled plasma (ICP) system employing Ar and C4F8, separately. The fluorocarbon ionic and radical compositions with respect to the residence time have also been studied in the case of C4F8 ICP. The ion current density with the gas residence time shows a totally opposite behavior in Ar and C4F8 discharge. To elucidate this phenomenon, the hot-electron population with the gas residence time was investigated. The measurement of hot electron population reveals that the energetic electrons are generated much more in Ar discharge but they become less in the case of C4F8 with the decrease of the residence time. Moreover, hot electron population is 3–6 times higher in Ar discharge than in C4F8. In the C4F8 ICP system, the number of all CFx (x=1–3) radicals increases but the intensity of the fluorocarbon ionic species [CFx+ (x=1–3)] except for the high-order molecular ions decreases with the decrease of the residence time. All of the diagnostic results show that the effects of the gas residence time must be considered by the characteristics of the plasma parameters as well as the effect of the adsorption and the desorption rate in the etch process.
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