Abstract
Gas phase particle formation and elimination in silicon epitaxial layers grown on Si (100) substrates using reduced pressure chemical vapor deposition at low temperatures (<600°C) are investigated. High-order silane precursors (SinH2n+2; n=3, n>3) are useful for high growth rate epitaxy at low temperature. However, particulates are observed on the surface of the epitaxial layers grown with high-order silanes. These particulates are attributed to gas phase particles. As atomically smooth epitaxial films are desired, the elimination of gas phase particles is required. Cyclical deposition and etch process and/or low pressure deposition enables atomically smooth SiCP epitaxial films with a high-order silane.
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