Abstract
A reatividade em fase gasosa das alcoxissilanas do tipo Me 4-n Si(OEt) n (n = 1-3) foi investigada por ressonância ciclotronica de ions por transformada de Fourier (FT-ICR) com o intuito de se caracterizar os mecanismos de ataque nucleofilico nesses importantes precursores de novos materiais. Nucleofilos como F - , MeO - e EtO - reagem rapidamente e de forma preferencial atacando o atomo de Si, formando a especie pentacoordenada de Si. Esta em seguida sofre processos de eliminacao iniciados, ou por um ion metidio nascente Me - , ou um ion etoxido EtO - , que por sua vez, podem abstrair um proton gerando carbânions ou siloxidos. Carbânions do tipo X(Me)3-nSi(OEt)nCH2 - (X = F, MeO, EtO e n = 1-3) e siloxidos do tipo X(Me)4-nSi(OEt)n-1O - (X = F, MeO, EtO e n = 2-3) podem ser facilmente dissociados por excitacao multifotonica no infravermelho induzida por um laser de CO 2 gerando uma grande variedade de siloxidos simples e silicatos analogos a especies intermediarias encontradas nas primeiras etapas de processos sol-gel. Para as alcoxissilanas que contem mais grupos etoxido, uma reacao competitiva analoga a uma eliminacao E2 e observada, onde o nucleofilo abstrai um hidrogenio β de um grupo etoxila, eliminando etileno. A cinetica, distribuicao relativa de produtos e termoquimica dessas reacoes tambem sao apresentadas para alguns casos especificos. The gas-phase reactivity of the Me 4-n Si(OEt) n (n = 1-3) alkoxysilanes was investigated by Fourier transform ion cyclotron resonance (FT-ICR) technique in order to characterize the fundamental mechanisms associated with nucleophilic attack on these important precursors of new materials. Typical nucleophiles such as F - , MeO - and EtO - react readily and preferentially by attack at the silicon center with formation of a pentacoordinated siliconate that undergoes elimination processes initiated by either a nascent methide ion, Me, or an ethoxide ion, EtO, that can abstract a proton to yield either a carbanion or a siloxide-type anion. Carbanions of the type X(Me) 3-n Si(OEt) n CH 2 - (X = F, MeO, EtO and n = 1-3) and siloxide ion of the type X(Me)4-nSi(OEt)n-1O - (X = F, MeO, EtO and n = 2-3) can be easily dissociated by infrared multiphoton excitation with a CO2 laser to give rise to a large variety of simple siloxide and silicate-type anions that are reminiscent of intermediate species in the early stages of sol-gel processes. For the higher-ethoxy containing substrates, a competing reaction is observed that is analogous to an E2 elimination reaction in which the nucleophile abstracts a β-proton from the ethoxy group leading to elimination of ethylene. The kinetics, relative product distribution and thermochemistry of these reactions are also reported for some specific cases.
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