Gas-phase kinetic and mechanistic investigation of the OH radical and Cl atom oxidation of tetraethoxysilane

Ian Barnes,Peter Wiesen

doi:10.1039/c6ra22473c

Abstract

Kinetic and mechanistic study of the atmospherically relevant reactions of the OH-radical and Cl-atom with tetraethoxysilane.

Highlights

Silicon esters are silicon compounds that contain an oxygen atom located between the silicon atom and an organic group, i.e., Si–O-R, the most common of which is tetraethoxysilane (TEOS, (CH3CH2O)4Si)
The photolytically produced OH radicals or Cl atoms initiate the decay of TEOS and the reference compounds through the following reactions: OH/Cl + TEOS / products, kTEOS
For both reactions with each reference compound reasonable linear relationships with near zero intercepts were obtained in all experiments

Summary

Introduction

Silicon esters are silicon compounds that contain an oxygen atom located between the silicon atom and an organic group, i.e., Si–O-R, the most common of which is tetraethoxysilane (TEOS, (CH3CH2O)4Si).

Results

Conclusion