Gas phase ion chemistry in methylgermane and methylgermane/silane

Abstract

The rate constants of the gas phase ion/molecule reactions in CH 3GeH 3 alone and in CH 3GeH 3/SiH 4 mixture have been determined by ion trap mass spectrometry and compared with those obtained in GeH 4 and CH 3SiH 3 alone, and in GeH 4/SiH 4 mixture. Collision rate constants have been calculated and efficiencies determined. Chain propagation of ions containing Ge, Si, and, possibly C, important in the radiolytical preparation of materials of interest in photovoltaic technology, occurs through ions such as GeSiCH n + ( n = 4, 6) from Si 2H n + ( n = 2, 4) reacting with methylgermane and GeSi 2CH n + ( n = 6, 7) from Si 3H n + ( n = 4, 5) reacting with methylgermane at rather high rates. The experimental conditions to increase yield of formation of ions with silicon and germanium are discussed.