Abstract
We present triethylboron (TEB) as a single-source precursor for chemical vapor deposition (CVD) of BxC thin films and study its gas phase chemistry under CVD conditions by quantum chemical calculations.
Highlights
Boron forms technically very interesting compounds including boron carbides (B4C)
For a more complete picture of TEB as a chemical vapor deposition (CVD) precursor for BxC films, we present results for films deposited at 700–1200 1C and include the low temperature results to show a wide temperature range from 400 1C to 1200 1C
For films deposited above 900 1C, voids are observed in the interface region in both atmospheres, which is likely the result of substrate and film solid state reaction, see Fig. 1(b), as it has been reported for Si(001) substrates used in CVD of SiC using silane and propane in H2.33
Summary
The rhombohedral phase of B4C is a very hard, light-weight material with high chemical and thermal stability as well as high wear resistance.[1] it is nominally called B4C, the carbon concentration of the compound can vary from 9 to 20 at% and exist as a stable single phase in a large homogeneous region from B4C to B10.4C.2,3. Boron nitride (BN) is isoelectronic to carbon and can form compounds with either sp3-hybridized or sp2-hybridized bonds. The most studied sp3-hybridized phase is the cubic (c-BN), which is isoelectronic to diamond, but there is a wurtzite phase (w-BN), which is isostructural to Lonsdaleite (hexagonal diamond). The interest for c-BN mainly stems from the phase similarities to diamond: c-BN is regarded as the hardest material after diamond and developed as hard coatings for cutting tools. The sp2-hybridized BN can crystallize into two different phases: hexagonal (h-BN)
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