Abstract
SiC membranes were prepared using curing of precursor polymer (polycarbosilane, PCS) film by electron beam irradiation in helium atmosphere. The membrane prepared via curing of PCS film coated using 10mass% PCS solution for dip-coating followed by immersing it for 30 s in PCS solution, showed H2 permeance of 3:1 10 7 mol/m/s/Pa and the selectivity of 51 at 523K. The H2 permeance of the membrane was increased proportional to the temperature by the activated diffusion of H2. It indicates SiC film without pinholes or cracks formed on the support. As the pyrolysis temperature of cured PCS film was increased, the selectivity of the membrane reached the maximum at 923K. [doi:10.2320/matertrans.M2010418]
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