Abstract
The application of gas cluster ion beam (GCIB) infusion in advanced IC fabrication is described. GCIB processes for surface modifications, additive (junction formation, deposition) and subtractive (etch) processing are discussed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
