GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study

Rebecca Saive,Christiana Honsberg,Hal Emmer,Chaomin Zhang,Christopher T Chen,Harry Atwater

doi:10.1109/pvsc.2018.8547704

GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study

Rebecca Saive, Christiana Honsberg + Show 4 more

https://doi.org/10.1109/pvsc.2018.8547704

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Publication Date: Jun 1, 2018

Citations: 16

Affiliation: University of Twente, Arizona State University, California Institute of Technology

#Silicon Heterojunction Solar Cells #Cross-sectional Kelvin + Show 8 more

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Abstract

We report on an study of the GaP/Si interface for application in silicon heterojunction solar cells. We analyzed the band alignment using X-ray photoelectron spectroscopy (XPS) and cross-sectional Kelvin probe force microscopy (x-KPFM). Our measurements show a high conduction band offset (0.9 eV) leading to a barrier in electron extraction which we microscopically resolved via x-KPFM. XPS reveals the presence of Si-Ga bonds which explains the observed interface dipole that leads to low open circuit voltage and low fill factor in GaP/Si heterojunction solar cells. Furthermore, we investigated the electronic and morphologic changes in GaP upon Si and Mg doping.

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