GaPN–GaP double heterostructure light emitting diode grown on GaP substrate by solid-source molecular beam epitaxy

Abstract

GaPN–GaP double heterostructure (DH) light emitting diodes (LEDs) were fabricated on GaP substrate by solid-source molecular beam epitaxy (SSMBE) with an rf plasma nitrogen source. High resolution X-ray diffraction (HRXRD) revealed that the LEDs had a high crystalline quality. The luminescence properties of GaPN–GaP DH LEDs were evaluated by electroluminescence (EL). All the EL peak wavelengths of LEDs were located between 645 and 660 nm. When the LEDs were operated at a forward current of 10 mA at room temperature (RT), the peak wavelengths of LEDs were 645, 647, and 653 nm with the nitrogen composition of 1.8, 2.1, and 2.6%, respectively. The light output of the LED with a nitrogen composition of 2.1% was the highest and that of 2.6% was the lowest. The EL emission peak of LEDs showed slight blueshift (about 7 nm) with increasing currents due to the band-filling effect. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)