Abstract
The deposition process for the gap-filling of sub-micrometer trenches using DMDMOS, (CH3)2Si(OCH3)2, and CxHyOz by flowable chemical vapor deposition (F-CVD) is presented. We obtained low-k films that possess superior gap-filling properties on trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on IMD and STI for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universal in other chemical vapor deposition systems.
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