Abstract
AbstractIn this paper we present the performance of GaPAlxGa1−xP heterostructure waveguides for integrated optic hybrid devices. The waveguide layer is graded with a parabolic refractive index profile for the light emission of a DHGaAs semiconductor laser. The waveguide heterostructure performed allows to couple at it edge crossection semiconductor laser or photodetector as well as fix or solder them on the same substrate on which the heterostructure layers were deposited.The heterostructure layers were grown by liquid phase epitaxy and the heterostructure waveguide was performed by means of etching technics specially developed for this purpose.Both, the growth procedure, as well as the etching technics are described. The results achieved are shown in curves and photographs, taken on a scanning microscope.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
