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Abstract
The relaxation of surface conductivity changes during the application and after the removal of external electric fields was investigated for n-GaAs surfaces covered with natural oxide. The relaxation processes in the heterojunction system of the oxidized surface are governed by various excitation mechanisms between the depletion layer in the bulk and fast surface states at the GaAs-oxide interface. Analysis of the experimental results yields new data on the energetic distribution of the fast surface states which show that there is a set of empty states in the upper half of the bulk energy gap and a set of occupied states near the middle of the bulk energy gap.
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