Abstract
High-resolution electron energy loss spectroscopy and photoluminescence measurements have been used to follow the formation of gap states during the initial oxidation of Si(100)-2×1 at room temperature. We find strong indications that gap states are already induced after the adsorption of 0.002 L of molecular oxygen on Si(100)-2×1. It is demonstrated that prolonged exposures of clean and dehydrogenated oxide films on Si(100) to H2O at room temperature decrease the density of gap states significantly.
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