Abstract
Gap inhomogeneity in Bi2Sr2CaCu2O8 has been studied by low-temperature STM. We found a systematic relation between the local gap energy and local background density of states. A model analysis of the dip–hump structure gave evidence of in-plane charge inhomogeneity. The temperature/doping dependences of the pattern shape of inhomogeneity as well as the gap distribution function were measured. We could identify the signature of phase separation into the superconducting and pseudogapped phases as the appearance of a double-peak structure in the distribution function.
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