Abstract
AbstractThe electronic band structures of InxGa1–xN and InxAl1–xN alloys are calculated by ab‐initio methods in a supercell geometry, and the effects of varying the composition and applying external pressure examined. Indium segregation is also simulated, and it is shown that it strongly influences the band gap and its pressure derivative. Both the band gaps and their pressure coefficients are considerably lower when In atoms are clustered, than when they are uniformly distributed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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