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Abstract
Fabrication of very thin GaN ultraviolet photodetectors on Si (111) substrate integrated with asymmetric (Pt–Ag, Pt–Cr) metal–semiconductor–metal (MSM) structure have been illustrated. Designed GaN photodetection device displays significant enhancement in responsivity for asymmetric (Pt–Ag) MSM structure (280 mA/W) in comparison to symmetric (Pt–Pt) MSM structure (126 mA/W) at 10 V bias. The fabricated asymmetric and symmetric devices also exhibit fast response time in the range of 30–59 ms. The enhancement in responsivity using asymmetric MSM structure ascribed to large difference in work function which lead to change in Schottky barrier height of the metal semiconductor junction. Additionally, power dependent photoresponse analysis of GaN asymmetric (Pt–Ag) ultraviolet photodetector was showing a responsivity of 116 mA/W at low optical power of 1 mW. Such GaN asymmetric MSM ultraviolet photodetectors having high responsivity can extensively be used for low power, high speed ultraviolet photo detection applications.
Published Version
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Schedule a callMore From: Journal of Materials Science: Materials in Electronics
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