Abstract
Over the last decade Gallium Nitride and its compound semiconductor derivatives that belong to the III-V system have demonstrated significant performance advantages in the area of light emitting diodes and high power devices. These have been enabled by their intrinsic wide band-gap of around 3.4 eV which manifest itself as enabling efficient light emission in the blue and green, as well as excellent transport properties (2DEG mobility of 1000-2000 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs) enabling high power & frequency transport devices which can operate at high temperature with high breakdown voltages, enabling an entire set of devices to address power efficiency.
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