Abstract
In order to enhance the light-output performance of Ga N-based high-voltage light-emitting diodes( HV-LEDs),the width of isolation trench between light-emission cells was optimized. The electrical and optical performance is the best while the width is 20 μm. When the injection current is 20 m A,the forward voltage is 50. 72 V,the light-output power is 373. 64 m W,and the electrooptical conversion efficiency is 36. 83%. Then,four chips were connected in series and packaged in reflective aluminum substrate or ceramic substrate using chip-on-board( COB) technology. Since the thermal conductivity and reflectivity are higher for reflective aluminum substrate comparing to ceramic substrate,the packaged HV-LEDs with reflective aluminum substrate show better light-output performance at a high injection current or a high temperature. On condition that the injection current is 20 m A and the substrate temperature is 20 ℃,the forward voltage and the light-output efficiency of HV-LEDs packaged using reflective aluminum substrate are 198. 9 V and 122. 2 lm / W,respectively.
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