Abstract
The influence of different energy electron beam irradiation on the luminescence properties of GaN-based LED has been studied.GaN-based LED epitaxial wafers are irradiated under the simulation of space electron radiation by 1.5,3.0,4.5 MeV electron beam irradiation in the laboratory and photoluminescence(PL) spectra is applied to measure luminescent properties.The results show that LED luminous intensity increase about 25% when the radiation doses is 10 kGy with electron energy is 1.5 MeV,while reduced ~16% in dose irradiation in 100 kGy.Under 3 MeV electron beam irradiation,the color purity of LED increased,while in the higher energy irradiation the device failed.
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