Abstract
In this thesis the magnetic properties of GaN:Gd layers grown by molecular beam epitaxy (MBE) are adressed. Structural analysis confirmes the substitutional incorporation of Gd on a Ga site with a 3+ valence. The samples show poor reproducibility with respect to the magnetic properties and strong indications that defects with a concentration of the order of 1019 cm−3 play an important role for the magnetic properties are found. The suggested connection between the ferromagnetism in GaN:Gd and the Ga vacancy is directly adressed by positron annihilation spectroscopy (PAS), but is not supported by the results. Oxygen co-doping of GaN:Gd promotes ferromagnetism at room temperature and points to the role of oxygen for the ferromagnetism in Gd doped GaN.
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