Abstract
InGaN/GaN microdisk light emitting diodes (LEDs) on (111)-oriented nanosilicon-on-insulator (nano-SOI) substrates are demonstrated. The (111)-oriented thin SOI substrates are prepared by separation by implantation of oxygen (SIMOX) method. The InGaN/GaN LED structures are grown on these SIMOX templates by metal-organic chemical vapor deposition. The circular mesa patterns are created by standard LED processing steps including photolithography, inductively coupled plasma etching, and contact metallization. Due to the reflectivity changes at the bottom Si/SiO2 interfaces beneath AlN buffer, an improved light extraction from these LEDs has been observed. The room-temperature electroluminescence (EL) spectrum of the microdisk LEDs on SOI shows multiple interference peaks due to the reflections at the Fabry-Pérot boundaries and such effect resulted in an increased integrated EL intensity. For a comparative analysis of light extraction with respect to similar LED structures grown on bulk Si(111), a detailed reflectivity analysis has been carried out to verify the LED structures and to model the EL lineshapes.
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