Abstract
We review the history, potential applications and characteristics of GaN-based devices, including devices based on polarization effects, such as pyroelectric and piezoelectric sensors and oscillating electron and hole islands in semiconductor grains embedded into a pyroelectric matrix; GaN-based heterostructure field effect transistors (HFETs); SAW and acousto-optics devices; UV light emitting diodes, and THz plasma wave electronics devices using GaN HFETs.
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