Abstract
In order to solve the problem that Ga N-based vertical structure LEDs( VS-LEDs) suffer from efficiency droop under high current injection level,hybrid quantum wells( HQWs) with coupled quantum wells( CQWs) and normal quantum wells( NQWs) were employed. Compared to VSLEDs with NQWs,VS-LEDs with HQWs had better properties,wherein forward voltage reduced by0. 68 V and light-output power increased by 53. 0% at a forward current of 350 m A. Meanwhile,the relative external quantum efficiencies of VS-LEDs with NQWs and VS-LEDs with HQWs reduced to37. 7% and 67. 5% of their maximum,respectively. The results reveal that the efficiency droop of LEDs can become less severe by exploiting HQWs.
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