Abstract
GaN thin films were prepared by changing the growth condition.The epitaxial layers were grown by metal-organic vapor phase epitaxy on sapphire(0001) substrates,and were characterized by photoluminescence,optical microscope and X-ray double crystal diffraction.In the experiment,we used full width at half maximum of X-ray double crystal diffraction to detect the dislocation density,and found the samples dislocation density was lowest when TMGa flows at 70 cm3/min.Using the best value of TMGa flows,we grew the samples by changing the growth temperature.Photoluminescence spectra showed that higher growth temperature is conducive to improve the optical properties,reduce the Ga vacancies density in the GaN samples,and improve the quality of GaN crystal.Optical microscope test indicated that the increasing of the growth temperature will improve the surface morphology,it gives the same conclusion with photoluminescence spectra test.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
