GaN Transistors for Miniaturized Pulsed-Power Sources

Abstract

In this paper, we discuss and demonstrate the potential of normally-on GaN high-electron-mobility transistors (HEMTs) as opening switches in miniaturized pulsed-power circuits. The high-breakdown electric field of GaN (~3 MV/cm) makes it possible to fabricate high-voltage devices in small dimensions, resulting in smaller parasitics and faster switching times. GaN HEMTs as opening switches are compatible with inductive topologies, which offer more than one order of magnitude higher energy density than capacitive topologies, allowing further miniaturization of pulsed-power systems. In this work, we demonstrate the application of fabricated 1.5-kV normally-on GaN HEMTs on an inductive switching topology, resulting in 300-fold voltage step-up, which makes it possible to generate high-voltage pulses with a low-voltage dc source in miniaturized circuits.