Abstract
AbstractThe conventional photodetector can detect the intensity of the incident light by the voltage or current, but it is not sensitive to the change of the incident angle or wavelength. A GaN‐based photodetector with nanostructure on the surface has been fabricated using nanoimprint lithography (NIL). The photovoltage between p‐ and n‐layers of the surface nanostructure photodetector took 6 or 12 periods when the incident illumination angles were changed on the back side. According to the characteristics, this type of photodetector can find out the change of the incidence angle or the change of the wavelength of the incident light. The short wave absorption disturbance can be avoided when the light illuminating based on the back side. Therefore, the stability of detection can be improved and the requirement of work environment is reduced. In addition, the generation principles of periodic photovoltage are different between the light illuminating based on the back side and the surface. Thus, the surface nanostructure photodetector can be used in wider fields. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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